1N5768 데이터 시트보기 (PDF) - Sensitron
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1N5768 Datasheet PDF : 3 Pages
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5151, REV. -
Isolated Diode Array
Applications:
• High Frequency Data Lines
• RS-323 & RS-432 Networks
• LAN, Ethernet, I/O Ports
• IEC61000-4 compatible for ESD / EFT / Surge
Features:
• Protects up to 8 I/O Ports
• Isolated diodes eliminate crosstalk
• High Density Packaging
• High Breakdown Voltage; High Speed Switching (< 10 nsec)
• Low Capacitance; Low Leakage
• Hermetic Ceramic package
• TX, TXV, S level screening available
1N5768
Maximum Ratings:
All ratings are at 25 oC unless otherwise noted
Characteristics
Symbol
Condition
Reverse Breakdown Voltage
Continuous Forward Current
VBR
Per diode @ 10 µA
IO
Per diode, Derate at 2.4 mA/°C
above +25 °C
Peak Surge Current
Power Dissipation
IFSM
Per diode, tP = 8.3 msec
PD
Per Junction, Derate at
4.0 mW/°C above +25 °C
Power Dissipation
PD
Per Package, Derate at
4 mW/oC above 25 oC
Max. Operating Temperature
TJ
-
Max. Storage Temperature
Tstg
-
Max.
60
300
500
400
500
-65 to +150
-65 to +200
Units
Vdc
mA
mA
mW
mW
°C
°C
Electrical Characteristics:
All ratings are per diode and at 25 oC unless otherwise noted
Characteristics
Symbol
Condition
Max.
Units
VF1
If = 100mAdc
1.00
V
Pulsed
Max. Forward Voltage Drop
PW = 300 µs
VF2
If = 500mAdc
1.50
V
Max. Reverse Current
IR1
@VR = 40V
0.1
µA
Max. Capacitance
(Pin to Pin)
CT
@VR = 0V, f =1MHz
4
pF
Max. Forward Recovery
Time
TFR
IF = 500mA
40
ns
Max. Reverse Recovery
Time
TRR
IF = IR = 200 mA dc, IRR = 20
mA dc, RL = 100 ohms
20
ns
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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