UTC 2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
Collector Current,Ic mA
VCE(sat)-Ic
5
-10
3
Ic/IB=10
7
2
5
-1.0
3
7
2
5
VBE(sat)-Ic
Ic/IB=10
3
2
-0.1
7
5
7-1.0
TA=70℃
TA=-30℃ TA=25℃
2 3 5 7 -10 2 3 5 7-100 2
Collector Current,Ic- mA
-1.0
TA=-30℃
7
5
TA=75℃
TA=25℃
3
2
7-1.0
2
3
5 7 -10 2 3
5 7-100 2 3
Collector Current,Ic- mA
Switch Time -Ic
10
7
5
tstg
3
2
tf
1.0
7
5
ton
3
2 VCC=-150V
0.1 10IB1=-10IB2=IC
7
Ta=25 ℃
5
-1.0
2
3
5
7 -10
2 3 5 7 -100
Collector Current,Ic- mA
23 5
-1000
5
3
2
-100
5
3
2
-10
5
ASO
Icp
10ms
Ic
100ms
1ms
DC
Operation
(DTCC=O2p5e℃ra)tion
(TA=25 ℃)
3
2
-1.0 TC=25℃
52 3 5 7 -10 2 3 5 7 -100 2 3 5
Collector to Emitter Voltage,V CE-V
12
Pc -Ta
10
8
6
4
2
No heat sink
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -℃
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