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MBRF16100 데이터 시트보기 (PDF) - Jinan Gude Electronic Device

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MBRF16100
JGD
Jinan Gude Electronic Device JGD
MBRF16100 Datasheet PDF : 3 Pages
1 2 3
Features
* Low power loss, high efficiency
* Guard-ring for overvoltage protection
* High surge current capability
* Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MBRF1635 THRU MBRF16150
Isolated Schottky Barrier Rectifiers
Package Outline Dimensions in inches (millimeters)
ITO-220AC
Mechanical Data
* Case: ITO-220AC
* Molding compound, UL flammability classification rating
94V-0
* Terminal: Matte tin plated leads, solderable per JESD
22-B102 Meet JESD 201 class 1A whisker test
* Polarity: As marked
* Mounting torque: 5 in-lbs maximum
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum D.C Blocking Voltage
Maximum Average Forward Rectified Current
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
Symbol
V RRM
V RMS
V DC
I F(AV)
IFRM
MBRF
1635
35
24
35
MBRF
1645
45
31
45
MBRF
1650
50
35
50
MBRF
1660
60
42
60
16
32
MBRF
1690
90
63
90
MBRF
16100
100
70
100
MBRF
16150
150
105
150
Unit
V
V
V
A
A
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load(JEDEC
I FSM
150
A
method)
Peak repetitive reverse surge current (Note 1)
IRRM
1.0
0.5
A
Maximum instantaneous forward voltage
(Note 2)
IF=16A, TJ=25
VF
IF=16A, TJ=125
Maximum reverse current @ Rated VR
TJ=25
TJ=125
IR
0.63
0.75
0.57
0.65
0.5
15
10
0.85
0.75
0.3
7.5
Voltage rate of change (Rated VR)
dV/dt
10000
Typical Thermal Resistance
Operating junction temperature range
Storage Temperature Range
R θJC
TJ
T STG
Note:1tp = 2.0 μs, 1.0KHz 2Pulse test with PW=300μs, 1% duty cycle
3
-55 to +150
-55 to +150
0.95
0.92
V
0.1
mA
5
V/μ
s
/W
Version: 6.1
www.jgdsemi.com

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