C5902 데이터 시트보기 (PDF) - Inchange Semiconductor

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C5902

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SC5902

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.13A

VBE(sat) Base-Emitter Saturation Voltage

IC= 4.5A; IB= 1.15A

ICBO

Collector Cutoff Current

VCE= 1000V; VBE= 0

3.0

V

1.5

V

50 uA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

500 mA

hFE

DC Current Gain

IC= 4.5A; VCE= 5V

5

10

Switching Times

tstg

Storage Time

tf

Fall Time

IC= 4.5A, IB1= 1.13A; IB2= -2.25A;

5.0 μs

0.5 μs

isc Website：www.iscsemi.cn

2

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