2SJ587 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SJ587

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SJ587

Silicon P Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS = 8.5 Ω typ. (VGS = -4 V , ID = -25 mA)

RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA)

• 2.5 V gate drive device.

• Small package (SMPAK)

Outline

ADE-208-801 (Z)

1st.Edition.

June 1999

SMPAK

D

3

2

G

1

S

3

1

2

1. Source

2. Gate

3. Drain

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