2SJ575 데이터 시트보기 (PDF) - Renesas Electronics

부품명

상세내역

제조사

2SJ575

Silicon P Channel MOS FET High Speed Switching

Renesas Electronics 

2SJ575

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

Pch Note 2

-30

±20

-100

-400

-100

400

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x20x0.7mm)

Unit

V

V

mA

mA

mA

mW

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Drain to source breakdown V(BR)DSS -30

—

voltage

Gate to source breakdown V(BR)GSS ±20

—

voltage

Gate to source leak current IGSS

—

—

Zero gate voltege drain

I DSS

—

—

current

Gate to source cutoff voltage VGS(off)

-1.3

—

Static drain to source on state RDS(on)

—

2.8

resistance

RDS(on)

—

5.7

Forward transfer admittance |yfs|

68

105

Input capacitance

Ciss

—

25

Output capacitance

Coss

—

20

Reverse transfer capacitance Crss

—

8

Turn-on delay time

t d(on)

—

10

Rise time

tr

—

15

Turn-off delay time

t d(off)

—

40

Fall time

tf

—

45

Note: 3. Pulse test

4. Marking is AP

Max

—

—

±5

-1

-2.3

3.3

7.9

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

mS

pF

pF

pF

ns

ns

ns

ns

Test Conditions

ID = -100 µA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = -30 V, VGS = 0

ID = -10µA, VDS = -5 V

ID = -50 mA,VGS = -10 V Note 3

ID = -50 mA,VGS = -4 V Note 3

ID = -50 mA, VDS = -10 V Note 3

VDS = -10 V

VGS = 0

f = 1 MHz

ID = -50mA, VGS = -10 V

RL = 200Ω

Share Link: