2SJ575 데이터 시트보기 (PDF) - Renesas Electronics
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2SJ575 Datasheet PDF : 10 Pages
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2SJ575
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
-1.0
Pulse Test
-0.8
-0.6
-0.4
I D = -100mA
-0.2
-50m A
-10m A
0
-2
-4
-6
-8 -10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
VGS = -4 V
5
2
1.0
0.5
-0.01
-10V
-0.02
-0.05
-0.1
Drain Current I D (A)
Static Drain to Source on State
Resistance vs. Temperature
10
I D = -10m A, -50m A
8
-100m A
VGS = -4 V
6
-10m A, -50m A, -100m A
4
-10 V
2
Pulse Test
0
–40
0
40 80 120 160
Case Temperature Tc ( °C)
Typical Transfer Characteristics
0.5
V DS = -10 V
Pulse Test
0.2
Tc = –25 °C
0.1
25 °C
0.05
75 °C
0.02
0.01
0.005
-0.01
-0.02
-0.05
-0.1
Drain Current I D (A)
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