2SK3019 데이터 시트보기 (PDF) - KEXIN Industrial

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2SK3019

N-Channel MOSFET

KEXIN Industrial 

SMD Type

MOSFET

■ Typical Characterisitics

N-Channel MOSFET

2SK3019

0.15

4V

3V

Ta=25°C

3.5V

Pulsed

0.1

2.5V

0.05

2V

VGS=1.5V

0

0

1

2

3

4

5

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Typical output characteristics

200m

VDS=3V

100m Pulsed

50m

20m

10m

5m

2m

Ta=125°C

1m

75°C

0.5m

25°C

−25°C

0.2m

0.1m

0

1

2

3

4

GATE-SOURCE VOLTAGE : VGS (V)

Fig.2 Typical transfer characteristics

2

VDS=3V

ID=0.1mA

Pulsed

1.5

1

0.5

0−50 −25 0 25 50 75 100 125 150

CHANNEL TEMPERATURE : Tch (°C)

Fig.3 Gate threshold voltage vs.

channel temperature

50

20

Ta=125°C

75°C

10

25°C

−25°C

5

VGS=4V

Pulsed

50

Ta=125°C

20

75°C

25°C

−25°C

10

5

VGS=2.5V

Pulsed

2

2

1

1

0.5

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5

DRAIN CURRENT : ID (A)

0.5

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5

DRAIN CURRENT : ID (A)

Fig.4 Static drain-source on-state

Fig.5 Static drain-source on-state

resistance vs. drain current (Ι)

resistance vs. drain current Ι(Ι)

15

Ta=25°C

Pulsed

10

5

ID=0.1A

ID=0.05A

00

5

10

15

20

GATE-SOURCE VOLTAGE : VGS (V)

Fig.6 Static drain-source

on-state resistance vs.

gate-source voltage

9

VGS=4V

8

Pulsed

7

ID=100mA

6

5

ID=50mA

4

3

2

1

0

−50 −25 0 25 50 75 100 125 150

CHANNEL TEMPERATURE : Tch (°C)

Fig.7 Static drain-source on-state

resistance vs. channel

temperature

0.5

0.2

Ta=−25°C

0.1

25°C

0.05

75°C

125°C

0.02

0.01

0.005

VDS=3V

Pulsed

0.002

0.001

0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5

DRAIN CURRENT : ID (A)

Fig.8 Forward transfer

admittance vs. drain current

200m

100m

50m

VGS=0V

Pulsed

20m

Ta=125°C

10m

75°C

5m

25°C

−25°C

2m

1m

0.5m

0.2m

0.1m

0

0.5

1

1.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.9 Reverse drain current vs.

source-drain voltage ( Ι)

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