2SK3019 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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2SK3019 Datasheet PDF : 5 Pages
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Threshold Voltage
Symbol
VDS
IDSS
IGSS
VGS(th)
Drain-Source On-Resistance
RDS(on)
Forward Transconductance
gFS
Dynamic Characteristics*
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Switching Characteristics*
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
* These parameters have no way to verify.
Test Condition
VGS = 0V, ID = 10µA
VDS =30V,VGS = 0V
VGS =±20V, VDS = 0V
VDS = 3V, ID =100µA
VGS = 4V, ID =10mA
VGS =2.5V,ID =1mA
VDS =3V, ID = 10mA
VDS =5V,VGS =0V,f =1MHz
VGS =5V, VDD =5V,
ID =10mA, Rg=10Ω, RL=500Ω,
Min Typ Max Units
30
V
1
µA
±2
µA
0.8
1.5
V
8
Ω
13
Ω
20
mS
13
pF
9
pF
4
pF
15
ns
35
ns
80
ns
80
ns
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2
D,Apr,2015
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