BF623 데이터 시트보기 (PDF) - NXP Semiconductors.

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BF623

PNP high-voltage transistors

NXP Semiconductors. 

NXP Semiconductors

PNP high-voltage transistors

Product data sheet

BF621; BF623

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

ICBO

IEBO

hFE

VCEsat

Cre

fT

collector-base cut-off current

IE = 0 A; VCB = −200 V

−

IE = 0 A; VCB = −200 V; Tj = 150 °C

−

emitter-base cut-off current

IC = 0 A; VEB = −5 V

−

DC current gain

IC = −25 mA; VCE = −20 V

50

collector-emitter saturation voltage IC = −30 mA; IB = −5 mA

−

feedback capacitance

IC = ic = 0 A; VCE = −30 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −10 V; f = 100 MHz 60

MAX.

−10

−10

−50

−

−800

1.6

−

UNIT

nA

µA

nA

mV

pF

MHz

2004 Dec 14

7

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