ZM33064C(1997) 데이터 시트보기 (PDF) - Zetex => Diodes
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ZM33064C Datasheet PDF : 5 Pages
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ZM33064
ABSOLUTE MAXIMUM RATING
Input Supply Voltage
-1 to 10V
Power Dissipation
Offstate Output Voltage 10V
TO92
780mW
Onstate Output
Sink Current(Note 1)
Clamp diode
Forward Current(Note 1)
Internally limited
100mA
SOT223
SO8
2W(Note 2)
780mW(Note 2)
Operating junction
temperature
150°C
Operating Temperature -40 to 85°C
Storage Temperature
-65 to 150°C
TEST CONDITIONS
(Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3))
COMPARATOR
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Threshold Voltage
High state output (Vcc increasing)
VIH
4.5
4.61
4.7
V
Low state output (Vcc decreasing)
VIL
4.5
4.59
4.7
V
Hysteresis
OUPUT
VH
0.01
0.02
0.05
V
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Output sink saturation:
VOL
(Vcc=4.0V, Isink=8.0mA)
(Vcc=4.0V, Isink=2.0mA)
0.46
1.0
V
0.15
0.4
V
(Vcc=1.0V, Isink=0.1mA)
0.25
V
Onstate output sink current
(Vcc , Output=4V)
Offstate output leakage current
(Vcc , Output=5V)
Clamp diode forward voltage
(If=10mA)
Isink
10
20
60
mA
Ioh
0.02
0.5
µA
Vf
0.6
1.2
1.5
V
Propagation delay
Td
1.5
µs
(Vin 5V to 4V, Rl=10k, Tamb=25°C)
TOTAL DEVICE
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Operating input voltage range
Vcc
1.0 to 6.5
V
Quiescent input current (Vcc=5V)
Iq
135
200
µA
Note:
1. Maximum package power dissipation must be observed
2. Maximum power dissipation, for the SOT223 and SO8 packages, is calculated assuming
that the device is mounted on a PCB measuring 2 inches square.
3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as
4-90
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