MMBTA43 데이터 시트보기 (PDF) - Fairchild Semiconductor

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MMBTA43

NPN High Voltage Amplifier

Fairchild Semiconductor 

Discrete POWER & Signal

Technologies

MPSA43

MMBTA43

C

C

BE

TO-92

SOT-23

Mark: 1E

E

B

NPN High Voltage Amplifier

This device is designed for application as a video output to

drive color CRT and other high voltage applications. Sourced

from Process 48. See MPSA42 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCES

VCBO

VEBO

IC

TJ, Tstg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

200

200

6.0

200

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V

V

V

mA

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Max

MPSA43

625

5.0

83.3

*MMBTA43

350

2.8

200

357

Units

mW

mW /°C

°C/W

°C/W

ã 1997 Fairchild Semiconductor Corporation

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