MMBTA43 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
MMBTA43 Datasheet PDF : 3 Pages
| |||
NPN High Voltage Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 160 V, IE = 0
VEB = 4.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
IC = 20 mA, IB = 2.0 mA
IC = 20 mA, IB = 2.0 mA
200
V
200
V
6.0
V
0.1
µA
0.1
µA
25
40
50
200
0.4
V
0.9
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
50
f = 100 MHz
Ccb
Collector-Base Capacitance
VCB = 20 V, IE = 0, f = 1.0 MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
MHz
4.0
pF
Share Link: 