SB160 데이터 시트보기 (PDF) - Diode Semiconductor Korea
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SB160 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
SB120 - - - SB1A0
SCHOTTKY BARRIER RECTIFIERS
FEATURES
◇ Metal-Semiconductor junction with guard ring
◇ Epitaxial construction
◇ Low forward voltage drop,low switching losses
◇ High surge capability
◇ For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
◇ The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
◇ Case:JEDEC DO--41,molded plastic
◇ Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
◇ Polarity: Color band denotes cathode
◇ Weight: 0.012 ounces,0.34 grams
◇ Mounting position: Any
VOLTAGE RANGE: 20 --- 100 V
CURRENT: 1.0 A
DO - 41
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
(see fig.1)
VRRM
VRMS
VDC
IF(AV)
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
@TJ=125℃
IFSM
Maximum instantaneous forward voltage
@ 1.0A
VF
Maximum reverse current
@TA=25℃
at rated DC blocking voltage @TA=100℃
IR
Typical junction capacitance (Note1)
CJ
Typical thermal resistance (Note2)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermalresistance junction to ambient
SB
120
SB
130
SB
140
SB
150
SB
160
SB
170
SB
180
SB
190
SB
1A0
UNITS
20 30 40 50 60 70 80 90 100 V
14 21 28 35 42 49 56 63 70 V
20 30 40 50 60 70 80 90 100 V
1.0
A
40.0
A
0.5
10.0
110
- 55 --- + 125
0.7
0.85
V
0.5
5.0
80
50
- 55 --- + 150
- 55 --- + 150
mA
pF
℃/W
℃
℃
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