BAS40 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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BAS40 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS40/-04/-05/-06 SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage
z Fast Switching
SOT-23
BAS40 MARKING: 43•
MARKING:
BAS40
BAS40-06 MARKING: 46
BAS40-05 MARKING：45
BAS40-06
BAS40-05
BAS40-04
B AS40-04 MARKING：44
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
VRRM
VRWM
VR
IFM
40
200
Power dissipation
PD
200
Thermal resistance junction to ambient
RθJA
500
Junction temperature
TJ
125
Storage temperature range
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V(BR)
IR=10μA
40
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
IR
VR=30V
VF
IF=1mA
IF=40mA
CD
VR=0,f=1MHz
t rr
Irr=1mA, IR=IF=10mA
RL=100Ω
www.cj-elec.com
1
Unit
V
mA
mW
℃/W
℃
℃
Max
200
380
1000
5
5
Unit
V
nA
mV
pF
ns
E,Oct,2015
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