BF422G(2004) 데이터 시트보기 (PDF) - ON Semiconductor

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BF422G
(Rev.:2004)

High Voltage Transistors NPN Silicon

ON Semiconductor 

BF420, BF422

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 220

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

BF420

300

BF422

250

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

BF420

300

BF422

250

Emitter −Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V(BR)EBO

BF420

5.0

BF422

5.0

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

ICBO

BF420

—

BF422

—

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

IEBO

BF420

—

BF422

—

ON CHARACTERISTICS

DC Current Gain

(IC = 25 mAdc, VCE = 20 Vdc)

hFE

BF420

50

BF422

50

Collector −Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

Base −Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

VCE(sat)

—

VBE(sat)

—

Current Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)

Common Emitter Feedback Capacitance

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)

fT

60

Cre

—

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Max

Unit

Vdc

—

—

Vdc

—

—

Vdc

—

—

µAdc

0.01

—

nAdc

100

—

—

—

—

Vdc

0.5

Vdc

2.0

MHz

—

pF

1.6

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