ILCT6 데이터 시트보기 (PDF) - Infineon Technologies
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ILCT6 Datasheet PDF : 3 Pages
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FEATURES
• Current Transfer Ratio, 50% Typical
• Leakage Current, 1.0 nA Typical
• Two Isolated Channels Per Package
• Direct Replacement for MCT6
• Underwriters Lab File #E52744
•
V
DE
VDE 0884 Available with Option1
DESCRIPTION
The ILCT6 is a two channel optocoupler for high
density applications. Each channel consists of an
optically coupled pair with a Gallium Arsenide
infrared LED and a silicon NPN phototransistor.
Signal information, including a DC level, can be
transmitted by the device while maintaining a
high degree of electrical isolation between input
and output.
The ILCT6 is especially designed for driving
medium-speed logic, where it may be used to
eliminate troublesome ground loop and noise
problems. It can also be used to replace relays
and transformers in many digital interface appli-
cations, as well as analog applications such as
CRT modulation.
Maximum Ratings
Emitter (each channel)
Rated Forward Current, DC .........................60 mA
Peak Forward Current, DC
(1.0 µs pulse, 300 pps) ..............................3.0 A
Power Dissipation at 25°C Ambient.......... 100 mW
Derate Linearly from 25°C ....................1.3 mW/°C
Detector (each channel)
Collector Current .........................................30 mA
Collector-Emitter Breakdown Voltage ............. 30 V
Power Dissipation at 25°C Ambient.......... 150 mW
Derate Linearly from 25°C .......................2 mW/°C
Package
Isolation Test Voltage ............................5300 VRMS
Isolation Resistance
VIO=500 V, TA=25°C.............................. ≥1012 Ω
VIO=500 V, TA=100°C............................ ≥1011 Ω
Creepage................................................ ≥7.0 mm
Clearance ............................................... ≥7.0 mm
Total Package Dissipation
at 25°C Ambient. .................................. 400 mW
Derate Linearly from 25°C ..................5.33 mW/°C
Storage Temperature .................–55°C to +150°C
Operating Temperature .............–55°C to +100°C
Lead Soldering Time at 260°C ................. 10 sec.
ILCT6/MCT6
Dual Phototransistor
Optocoupler
Dimensions in inches (mm)
pin one ID
4 321
.255 (6.48)
.268 (6.81)
5 678
Anode 1
Cathode 2
Cathode 3
8 Emitter
7 Collector
6 Collector
.030 (0.76)
.045 (1.14)
4° typ.
.050 (1.27)
.018 (.46)
.022 (.56)
.379 (9.63)
.390 (9.91)
Anode 4
5 Emitter
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10 °
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Table 1. Electrical Characteristics TA=25°C
Symbol Min. Typ.
Emitter
Forward Voltage
VF
Reverse Current
IR
Junction Capacitance CJ
Detector
— 1.25
— 0.1
— 25
Breakdown Voltage
Leakage Current,
Collector-Emitter
BVCEO 30 65
BVECO 7.0 10
ICEO
— 1.0
Capacitance,
Collector-Emitter
CCE
— 8.0
Package
DC Current
Transfer Ratio
CTR
20 50
Saturation Voltage,
Collector-Emitter
VCEsat —
—
Isolation
Capacitance
CISOL
—
0.5
Capacitance
—
between Channels
— 0.4
Bandwidth
—
— 150
Switching Times,
Output Transistor
ton, toff —
3.0
Max
.
1.50
10
—
—
—
100
—
—
0.40
—
—
—
—
Unit
V
µA
pF
V
—
nA
pF
%
V
pF
pF
kHz
µs
Condition
IF=20 mA
VR=3.0 V
VF=0 V
IC=10 µA
IE=10 µA
VCE=10 V
VCE=0 V
IF=10 mA
VCE=10 V
IC=2.0 mA
IF=16 mA
f=1.0 MHz
f=1.0 MHz
IC=2.0 mA
VCC=10 V
RL= 100 Ω
IC=2.0 mA
RE=100 Ω,
VCE=10
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–170
March 9, 2000-20
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