MPSA42 데이터 시트보기 (PDF) - Fairchild Semiconductor

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MPSA42

NPN High Voltage Amplifier

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

NPN High Voltage Amplifier

(continued)

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

IC = 1.0 mA, IB = 0

IC = 100 µA, IE = 0

IE = 100 µA, IC = 0

VCB = 200 V, IE = 0

VEB = 6.0 V, IC = 0

300

V

300

V

6.0

V

0.1

µA

0.1

µA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IC = 1.0 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

IC = 20 mA, IB = 2.0 mA

IC = 20 mA, IB = 2.0 mA

25

40

40

0.5

V

0.9

V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

IC = 10 mA, VCE = 20 V,

50

f = 100 MHz

Ccb

Collector-Base Capacitance

VCB = 20 V, IE = 0, f = 1.0 MHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

MHz

3.0

pF

Spice Model

NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2

Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n

Itf=5 Vtf=20 Xtf=150 Rb=10)

Typical Characteristics

DC Current Gain

vs Collector Current

140

120

125 °C

100

25 °C

80

60

40

20 VCE= 5V

- 40 ºC

0.1

1

10

100

I C - COLLECTOR CURRENT (mA)

Collector-Emitter Saturation

Voltage vs Collector Current

0.3

β = 10

0.25

0.2

0.15

0.1

125 °C

25 °C

0.05

- 40 ºC

0.1

1

10

100

I C - COLLECTOR CURRENT (mA)

P

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