BCW67(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BCW67
(Rev.:2001)

PNP Silicon AF Transistors

Infineon Technologies 

BCW67, BCW68

Base-emitter saturation voltage

IC = f (VBEsat), hFE = 10

Collector-emitter saturation voltage

IC = f (VCEsat), hFE = 10

10 3 BCW 67/68

mA

ΙC

10 2

5

150 ˚C

25 ˚C

-50 ˚C

EHP00401

10 3 BCW 67/68

mA

ΙC

10 2

5

150 ˚C

25 ˚C

-50 ˚C

EHP00402

10 1

10 1

5

5

100

10 0

5

5

10 -1

0

1

2

DC current gain hFE = f (IC)

VCE = 1V

3V 4

VBE sat

10 -1

0

200

400

600 mV 800

VCE sat

10 3 BCW 67/68

5 100 ˚C

h FE

25 ˚C

102 -50 ˚C

5

EHP00403

10 1

5

10 0

10 -1

5 10 0

5 10 1

5 10 2 mA 10 3

ΙC

5

Jul-10-2001

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