MJD112 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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MJD112

Silicon NPN transistor in a TO-252 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MJD112

Rev.E May.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current – Continuous(Pulse)

Base Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Pulse Test:PW≤300μs,Duty Cycle≤2%

符号

Symbol

VCBO

VCEO

VEBO

IC

IC(Pulse)

IB

PC

PC(TC=25℃ )

Tj

Tstg

电性能参数 / Electrical Characteristics(Ta=25℃)

数值

Rating

100

100

5.0

2.0

4.0

50

1.75

20

150

-55～150

单位

Unit

V

V

V

A

A

mA

W

W

℃

℃

参数

Parameter

Collector to Emitter Breakdown

Voltage*

Collector Cut-Off Current

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation

Voltage

Base-Emitter Saturation Voltage*

Base-Emitter-On Voltage*

Current Gain Bandwidth Product

Output Capacitance

符号

Symbol

测试条件

Test Conditions

VCEO* IC=30mA IB=0

ICEO

ICBO

IEBO

hFE(1)*

hFE(2)*

hFE(3)*

VCE(sat)1*

VCE(sat)2*

VBE(sat)*

VBE(on)*

fT

Cob

VCE=50V

VCB=100V

VEB=5.0V

VCE=3.0V

VCE=3.0V

VCE=3.0V

IC=2.0A

IC=4.0A

IC=4.0A

VCE=3.0V

VCE=10V

VCB=10V

f=0.1MHz

IB=0

IE=0

IC=0

IC=2.0A

IC=0.5A

IC=4.0A

IB=8.0mA

IB=40mA

IB=40mA

IC=2.0A

IC=0.75A

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

100

V

1000

500

200

25

0.02 mA

0.02 mA

2.0 mA

12K

2.0 V

3.0 V

4.0 V

2.8 V

MHz

100 pF

*Pulse Test:Pulse Width≤380us,Duty Cycle≤2%. *脉冲测试：脉宽≤380us,占空比≤2%。

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