BFP181TW(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BFP181TW Datasheet PDF : 5 Pages
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BFP181T/BFP181TW/BFP181TRW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA.
Features
D Low noise figure
D High power gain
21
12
13 653
13 566
34
BFP181TW Marking: W18
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
21
13 654
43
13 566
BFP181TRW Marking: WSF
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
94 9279
13 579
3
4
BFP181T Marking: 18
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 78 °C
Document Number 85012
Rev. 3, 20-Jan-99
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
15
V
10
V
2
V
20
mA
160
mW
150
°C
–65 to +150 °C
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