BFP181T(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors

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BFP181T
(Rev.:1999)

Silicon NPN Planar RF Transistor

Vishay Semiconductors 

BFP181T/BFP181TW/BFP181TRW

Vishay Semiconductors

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

m Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3

plated with 35 m Cu

Electrical DC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Collector cut-off current

VCE = 15 V, VBE = 0

Collector-base cut-off current

VCB = 10 V, IE = 0

Emitter-base cut-off current

VEB = 1 V, IC = 0

Collector-emitter breakdown voltage IC = 1 mA, IB = 0

Collector-emitter saturation voltage IC = 15 mA, IB =1.5 mA

DC forward current transfer ratio VCE = 6 V, IC = 5 mA

VCE = 6 V, IC = 10 mA

Symbol

Value

Unit

RthJA

450

K/W

Symbol Min Typ Max Unit

ICES

100 mA

ICBO

IEBO

100 nA

1 mA

V(BR)CEO 10

V

VCEsat

0.1 0.4 V

hFE 50 100 150

hFE

100

Electrical AC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Transition frequency

Collector-base capacitance

Collector-emitter capacitance

Emitter-base capacitance

Noise figure

Power gain

Transducer gain

Test Conditions

VCE = 3 V, IC = 6 mA, f = 500 MHz

VCE = 8 V, IC = 10 mA, f = 500 MHz

VCB = 10 V, f = 1 MHz

VCE = 10 V, f = 1 MHz

VEB = 0.5 V, f = 1 MHz

VCE = 5 V, IC = 3 mA, ZS = ZSopt,

f = 900 MHz

VCE = 5 V, IC = 3 mA, ZS = ZSopt,

f = 1.75 GHz

W VCE = 8 V, IC = 8 mA, ZS = 50 ,

W ZL = ZLopt, f = 900 MHz

VCE = 8 V, IC = 8 mA, ZS = 50 ,

W ZL = ZLopt, f = 1.75 GHz

VCE = 8 V, IC = 8 mA, Z0 = 50 ,

f = 900 MHz

Symbol Min Typ Max Unit

fT

6.8

GHz

fT

8.0

GHz

Ccb

0.3

pF

Cce

0.2

pF

Ceb

0.45

pF

F

1.5

dB

F

2.2

dB

Gpe

16.5

dB

Gpe

13.5

dB

S21e2

16

dB

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2 (5)

Document Number 85012

Rev. 3, 20-Jan-99

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