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BFP181 데이터 시트보기 (PDF) - Siemens AG
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BFP181
NPN Silicon RF Transistor
Siemens AG
BFP181 Datasheet PDF : 7 Pages
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BFP 181
Collector-base capacitance
C
cb
=
f
(
V
CB
)
V
BE
=
v
be
= 0,
f
= 1MHz
0.32
pF
C
cb
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
4
8
12
16
Power Gain
G
ma
,
G
ms
=
f
(
I
C
)
f
= 0.9GHz
V
CE
= Parameter
V 22
V
R
24
dB
10V
5V
G
20
3V
18
2V
16
14
1V
12
0.7V
10
8
0 2 4 6 8 10 12 14 mA 18
I
C
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= Parameter
10.0
GHz
10V
f
T
8.0
8V
7.0
5V
6.0
3V
5.0
2V
4.0
3.0
1V
0.7V
2.0
1.0
0.0
0 2 4 6 8 10 12 14 mA 17
I
C
Power Gain
G
ma
,
G
ms
=
f
(
I
C
)
f
= 1.8GHz
V
CE
= Parameter
18
dB
10V
G
14
5V
3V
12
2V
10
8
1V
6
0.7V
4
2
0
0 2 4 6 8 10 12 14 mA 18
I
C
Semiconductor Group
6
Dec-11-1996
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