BFP181 데이터 시트보기 (PDF) - Infineon Technologies

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BFP181

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

Low Noise Silicon Bipolar RF Transistor

• For low noise, high-gain broadband amplifiers at

3

collector currents from 0.5 mA to 12 mA

4

• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz

• Pb-free (RoHS compliant) package

• Qualification report according to AEC-Q101 available

BFP181

2

1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP181

Marking

Pin Configuration

RFs

1=C 2=E 3=B 4=E -

-

Package

SOT143

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation1)

TS ≤ 75 °C

Junction temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

TJ

TStg

Value

12

20

20

2

20

2

175

150

-55 ... 150

Unit

V

mA

mW

°C

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point2)

RthJS

430

K/W

1TS is measured on the collector lead at the soldering point of the pcb

2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

1

2013-10-15

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