BD896 데이터 시트보기 (PDF) - Comset Semiconductors

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BD896

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

BD896 – BD898 – BD900 – BD902

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220

enveloppe. They are intended for use in output stages in audio equipment, general amplifiers,

and analogue switching application.

NPN complements are BD895 - BD897 - BD899 - BD901

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

IB

Base Current

PT

Power Dissipation

TJ

Junction Temperature

Ts

Storage Temperature range

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

Tc = 25°

Ta = 25°

Value

-45

-60

-80

-100

-45

-60

-80

-100

-5

-8

-300

70

2

150

-65 to +150

Unit

V

V

V

A

mA

Watts

°C

25/09/2012

COMSET SEMICONDUCTORS

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