BD896 데이터 시트보기 (PDF) - Comset Semiconductors
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BD896 Datasheet PDF : 4 Pages
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SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
ICEO
IEBO
VCEO
VCE(SAT)
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current
Collector-Emitter
Breakdown Voltage
(*)
Collector-Emitter
saturation Voltage (*)
IE= 0
VCB = -45 V
IE= 0
VCB = -60 V
IE= 0
TC=25°C
VCB = -80 V
IE= 0
VCB = -100 V
IE= 0
VCB = -45 V
IE= 0
VCB = -60 V TC=100°
IE= 0
C
VCB = -80 V
IE= 0
VCB = -100 V
IE= 0, VCE = - 30 V
IE= 0, VCE = - 30 V
IE= 0, VCE = - 40 V
IE= 0, VCE = - 50 V
VEB= -5 V, IC= 0
IC= -100 mA, IB= 0
IC= -3 A, IB= -12 mA
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
Min Typ Max Unit
-
- -0.2 mA
-
-
-2 mA
-
- -0.5 mA
-
-
-2 mA
-45 -
-60 -
-80 -
-100 -
-
-
-
V
-
-
- -2.5 V
25/09/2012
COMSET SEMICONDUCTORS
2|4
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