EGF1D(2007) 데이터 시트보기 (PDF) - Vishay Semiconductors
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EGF1D Datasheet PDF : 4 Pages
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EGF1A thru EGF1D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL EGF1A EGF1B EGF1C
Maximum instantaneous forward voltage (1) 1.0 A
VF
1.0
Maximum DC reverse current at rated DC
blocking voltage (1)
TA = 25 °C
TA = 125 °C
IR
5.0
50
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
Typical junction capacitance
4.0 V, 1 MHz
CJ
15
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
EGF1D
UNIT
V
µA
ns
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL EGF1A EGF1B EGF1C EGF1D
UNIT
Typical thermal resistance (1)
Note:
RθJA
RθJL
85
30
°C/W
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
EGF1D-E3/67A
0.104
67A
EGF1D-E3/5CA
EGF1DHE3/67A (1)
EGF1DHE3/5CA (1)
0.104
0.104
0.104
5CA
67A
5CA
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
1.0
0.5
Resistive or Inductive Load
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0
0
25 50
75 100 125 150 175
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
30
25
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
20
15
10
5
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 88579
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 27-Aug-07
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