EGF1D(2007) 데이터 시트보기 (PDF) - Vishay Semiconductors
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EGF1D Datasheet PDF : 4 Pages
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EGF1A thru EGF1D
Vishay General Semiconductor
100
10
TJ = 150 °C
1
TJ = 25 °C
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
70
TJ = 25 °C
60
f = 1.0 MHz
Vsig = 50 mVp-p
50
40
30
20
10
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
1000
100
100
TJ = 150 °C
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214BA (GF1)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
0.040 (1.02)
0.066 MIN.
(1.68 MIN.)
0.076 MAX.
(1.93 MAX.)
0.118 (3.00)
0.100 (2.54)
0.060 (1.52)
0.030 (0.76)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
0.060 MIN.
(1.52 MIN.)
0.108 (2.74)
0.098 (2.49)
0.114 (2.90)
0.094 (2.39)
0.220
(5.58) REF
Document Number: 88579 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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