HVC133(1996) 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HVC133
(Rev.:1996)

Silicon Epitaxial Planar Pin Diode for High Frequency Switching

Hitachi -> Renesas Electronics 

HVC133

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Power dissipation

Junction temperature

Storage temperature

Symbol

VR

Pd

Tj

Tstg

Value

Unit

30

V

150

mW

125

°C

-55Å`+125

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Reverse voltage

VR

30 Å\ Å\ V IR = 1µA

Reverse current

IR

Å\ Å\ 100 nA VR = 25V

Forward voltage

VF

Å\ Å\ 0.85 V IF = 2 mA

Capacitance

C1

Å\ Å\ 1.0 pF VR = 1V, f = 1 MHz

C6

Å\ Å\ 0.9

VR = 6V, f = 1 MHz

Forward resistance rf

Å\ 0.55 0.7 Ω IF = 2mA, f = 100 MHz

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