MMBT3904LT1 데이터 시트보기 (PDF) - ON Semiconductor
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MMBT3904LT1 Datasheet PDF : 6 Pages
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MMBT3904LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
Fall Time
(VCC = 3.0 Vdc,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
HFE
VCE(sat)
VBE(sat)
40
60
6.0
−
−
40
70
100
60
30
−
−
0.65
−
fT
300
Cobo
−
Cibo
−
hie
1.0
hre
0.5
hfe
100
hoe
1.0
NF
−
td
−
tr
−
ts
−
tf
−
DUTY CYCLE = 2%
300 ns
−0.5 V
+10.9 V
10 k
< 1 ns
+3 V
275
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
+10.9 V
0
CS < 4 pF*
−9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
10 k
1N916
Max
Unit
−
Vdc
−
Vdc
−
Vdc
50
nAdc
50
nAdc
−
−
−
300
−
−
Vdc
0.2
0.3
Vdc
0.85
0.95
−
MHz
4.0
pF
8.0
pF
10
k ohms
8.0
X 10− 4
400
−
40
mmhos
5.0
dB
35
ns
35
200
ns
50
+3 V
275
CS < 4 pF*
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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