HSB0104YP 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명

상세내역

제조사

HSB0104YP

Silicon Schottky Barrier Diode for High Speed Switching

Hitachi -> Renesas Electronics 

HSB0104YP

Absolute Maximum Ratings (Ta = 25°C) *1

Item

Symbol

Repetitive peak reverse VRRM

voltage

Average rectified current

Non-Repetitive peak

forward surge current

Io

I *2

FSM

Junction temperature

Tj

Storage temperature

Tstg

Note: 1. Per one device

Note: 2. 10msec sine wave 1 pulse

Value

Unit

40

V

100

mA

3

A

125

°C

-55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Forward voltage

Reverse current

Capacitance

Symbol Min Typ Max Unit Test Condition

VF

— — 0.58 V

IF = 100 mA

IR

— — 50 µA VR = 40V

C

— 20 — pF VR = 0V, 1=1MHz

2

Share Link: