H11B815 데이터 시트보기 (PDF) - QT Optoelectronics => Fairchildsemi
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H11B815 Datasheet PDF : 4 Pages
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4-PIN PHOTODARLINGTON
OPTOCOUPLERS
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
Test Conditions Symbol Min
(IF = 20 mA)
VF
(VR = 6.0 V)
IR
(IC = 1.0 mA, IF = 0) BVCEO
35
(IE = 100 µA, IF = 0) BVECO
6
(VCE = 10 V, IF = 0)
ICEO
(VCE = 0 V, f = 1 MHz)
CCE
H11B815
Typ**
Max
Unit
1.2
1.50
V
0.001
10
µA
60
V
8
V
0.005
1
µA
8
pF
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions Symbol Min
Current Transfer Ratio, Collector-Emitter
(IF = 1 mA, VCE = 2 V)
CTR
600
Saturation Voltage
(IF = 20 mA, IC = 5 mA) VCE(sat)
Rise Time (non saturated)
(IC = 10 mA, VCE = 2 V, RL = 100!)
tr
Fall Time (non saturated)
(IC = 10 mA, VCE = 2 V, RL = 100!)
tf
Typ**
0.8
Max
7,500
1.0
300
250
Units
%
V
µs
µs
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
** All typicals at TA = 25°C
Test Conditions
(II-O "#1 µA, 1 min.)
(VI-O = 500 VDC)
(VI-O = $, f = 1 MHz)
Symbol
VISO
RISO
CISO
Min
5300
1011
Typ**
0.5
Max
Units
Vac(rms)
!
pf
1/25/00 200029A
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