BCV28 데이터 시트보기 (PDF) - Infineon Technologies

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BCV28

PNP Silicon Darlington Transistors

Infineon Technologies 

BCV28, BCV48

Thermal Resistance

Parameter

Symbol

Value

Junction - soldering point1)

RthJS

≤ 20

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCV28

IC = 10 mA, IB = 0 , BCV48

V(BR)CEO

30

-

60

-

V

-

-

Collector-base breakdown voltage

IC = 100 µA, IE = 0 , BCV28

IC = 100 µA, IE = 0 , BCV48

V(BR)CBO

40

-

-

80

-

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO 10

-

-

Collector-base cutoff current

VCB = 30 V, IE = 0 , BCV28

VCB = 60 V, IE = 0 , BCV48

VCB = 30 V, IE = 0 , TA ≤ 150 °C, BCV28

VCB = 60 V, IE = 0 , TA ≤ 150 °C, BCV48

ICBO

µA

-

-

0.1

-

-

0.1

-

-

10

-

-

10

Emitter-base cutoff current

VEB = 4 V, IC = 0

DC current gain1)

IC = 10 µA, VCE = 1 V, BCV28

IC = 10 µA, VCE = 1 V, BCV48

IC = 10 mA, VCE = 5 V, BCV28

IC = 10 mA, VCE = 5 V, BCV48

IC = 100 mA, VCE = 5 V, BCV28

IC = 100 mA, VCE = 5 V, BCV48

IC = 0.5 A, VCE = 5 V, BCV28

IC = 0.5 A, VCE = 5 V, BCV48

IEBO

hFE

-

-

4000 -

2000 -

10000 -

4000 -

20000 -

10000 -

4000 -

2000 -

100 nA

-

-

-

-

-

-

-

-

-

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

Base emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

VCEsat

-

-

1V

VBEsat

-

-

1.5

2

2011-10-05

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