BZT52C10S 데이터 시트보기 (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
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BZT52C10S Datasheet PDF : 3 Pages
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RoHS
BZT52C2V4S-39S
BZT52C2V4S-BZT52C39S ZENER DIODE
ＷＥＪ ＥＬＥＣＴＲＯＮＩＣ ＣＯ．，ＬＴＤ FEATURES：
z Planar die construction
z 200mW power dissipation on ceramic PBC
z General purpose, Medium current
z Ideally suited for automated assembly processes
z Available in Lead free version
Maximum Ratings @Ta=25℃ unless otherwise specified
Characteristic
Symbol
Value
Forward Voltage (Note 2) @ IF = 10mA
VF
0.9
Power Dissipation(Note 1)
PD
200
Thermal Resistance, Junction to Ambient Air
RθJA
625
Operating and Storage Temperature Range
Tj,TSTG
-65 to +150
Notes:1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
Unit
V
mW
℃/W
℃
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:wej@yongerjia.com
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