IRFR120(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
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IRFR120 Datasheet PDF : 8 Pages
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IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 10 V
16
4.4
7.7
Single
0.27
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR120PbF
SiHFR120-E3
SnPb
IRFR120
SiHFR120
Note
a. See device orientation.
DPAK (TO-252)
IRFR120TRPbFa
SiHFR120T-E3a
IRFR120TRa
SiHFR120Ta
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR120/SiHFR120)
• Straight Lead (IRFU120/SiHFU120)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
DPAK (TO-252)
IRFR120TRRPbFa
SiHFR120TR-E3a
IRFR120TRRa
SiHFR120TRa
DPAK (TO-252)
IRFR120TRLPbFa
SiHFR120TL-E3a
IRFR120TRLa
SiHFR120TLa
IPAK (TO-251)
IRFU120PbF
SiHFU120-E3
IRFU120
SiHFU120
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
EAS
Repetitive Avalanche Currenta
IAR
Repetitive Avalanche Energya
EAR
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
PD
dV/dt
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91266
S-Pending-Rev. A, 21-Jul-08
WORK-IN-PROGRESS
LIMIT
100
± 20
7.7
4.9
31
0.33
0.020
210
7.7
4.2
42
2.5
5.5
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
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