IRF150 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRF150 Datasheet PDF : 3 Pages
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IRF150/151/152/153
N-CHANNEL
POWER MOSFETS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
' Characteristic
Symbol Type Mln Typ Max Units
Test Condition*
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) (3)
Is
IRF150
IRF151
-
—
40
A
IRF152
IRF163
-
-
33
A Modified MOSFET symbol
showing the integral
ISM
IRF160
IRF151
-
-
160
A reverse P-N junction rectifier
IRF152
IRF163
-
-
132
A
•4$
Diode Forward Voltage (2)
* IRF150
IRF161
-
-
IRF152
IRF153
-
-
2.5 V Tc-25°C, ls=40A, Vos-OV
2.3 V Tc=25°C, IS-33A, Ves-OV
Reverse Recovery Time
t,, ALL - 600 - ns Tj=150°C, lF=40A, dlF/dt=100A/|iS
Notes: (1) Tj-25°C to 150°C (2) Pulse test: Pulse widthOOOps, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
10
20
30
40
SO
Vos. CRAIN-TO-SOURCE VOLTAGE (VOLTE)
Typical Output Characteristics
2
3
4
6
6
7
Vos, OATE-7O-SOURCE VOLTAGE (VOLTS)
Typical Transfer Characteristics
0.4
08
12
16
20
Vos. DRAIH-TO-SOURCE VOLTABE (VOLTS)
Typical Saturation Characterljllcs
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5 10 20 50 100 200 600 1000
Vgj. DRAIN-TO-SOURCE VOLTAOE (VOLTS)
Maximum Sat* Operating AIM
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