BUT12 데이터 시트보기 (PDF) - Philips Electronics
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BUT12 Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12; BUT12A
10
handbook, halfpage
VCEsat
(V)
1
(1) (2) (3)
MGB872
102
handbook, halfpage
hFE
10
MBC096
VCE = 5 V
1V
10−1
10−2
10−1
1
IB (A) 10
(1) IC = 3 A.
(2) IC = 6 A.
(3) IC = 8 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.10 Collector-emitter saturation voltage as a
function of base current.
1
10−2
10−1
1
10 IC (A) 102
Fig.11 DC current gain; typical values.
handbook, halfpage
VIM
0
tp
T
VCC
RL
RB
D.U.T.
MGE244
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.12 Test circuit resistive load.
handbook, halfpage
90%
IB
10%
tr ≤30 ns
90%
MBB731
IB on
t
IB off
IC on
IC
10%
ton
tf
t
ts
tr ≤ 20 ns.
Fig.13 Switching time waveforms with
resistive load.
1997 Aug 13
7
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