BUT12A 데이터 시트보기 (PDF) - Nell Semiconductor Co., Ltd
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BUT12A Datasheet PDF : 6 Pages
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SEMICONDUCTOR
BUT12A Series RRooHHSS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
ICES
lEBO
Collector to emitter cutoff current
Emitter to base cutoff current
VCE=1000V, VBE=0
VEBO=9V, lC=0
TC=25°C
TC=125°C
VCEO
Collector to emitter voltage
IB=0
450
VCEO(SUS)* Collector to emitter sustaining voltage IC=100mA, IB=0, L=25mH
450
Forward current transfer ratio
IC=10mA, VCE=5V
10
hFE*
(DC current gain)
IC=1A, VCE=5V
10
VCE(sat)*
Collector to emitter saturation voltage IC=5A, IB=1.0A
VBE(sat)*
Base to emitter saturation voltage
SWITCHING TIMES RESISTIVE LOAD
IC=5A, IB=1.0A
ton
Turn-on time
tstg
Storage time
tf
Fall time
SWITCHING TIMES INDUCTIVE LOAD
IC=5A, IB(on)= -IB(off)=1A,
VCC=250V
tstg
Storage time
tf
Fall time
IC=5A, IB(on)=1A,
VCC=300V,VEB=5V,
LB=1µH
TC=25°C
TC=100°C
TC=25°C
TC=100°C
*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.
Typ.
18
20
1.7
1.9
110
200
Max.
1.0
3.0
10
35
35
1.5
1.5
1
4
0.8
2.3
2.5
150
300
UNIT
mA
V
V
µS
µS
nS
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