PS2506L-1-E3 데이터 시트보기 (PDF) - NEC => Renesas Technology

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PS2506L-1-E3

HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

NEC => Renesas Technology 

PS2506-1,-2,-4,PS2506L-1,-2,-4

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)

Parameter

Symbol

Ratings

Unit

PS2506-1,

PS2506L-1

PS2506-2,-4

PS2506L-2,-4

Diode

Forward Current (DC)

IF

±80

mA

Power Dissipation Derating ∆PD/°C

1.5

1.2

mW/°C

Power Dissipation

PD

Peak Forward Current*1

IFP

150

120

±1

mW/ch

A

Transistor Collector to Emitter Voltage VCEO

40

V

Emitter to Collector Voltage VECO

6

V

Collector Current

IC

200

160

mA/ch

Power Dissipation Derating ∆PC/°C

2.0

1.6

mW/°C

Power Dissipation

Isolation Voltage*2

PC

200

160

mW/ch

BV

5 000

Vr.m.s.

Operating Ambient Temperature

TA

–55 to +100

°C

Storage Temperature

Tstg

–55 to +150

°C

*1 PW = 100 µs, Duty Cycle = 1 %

*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

Parameter

Symbol

Conditions

MIN. TYP. MAX. Unit

Diode

Forward Voltage

VF

IF = ±10 mA

1.17

1.4

V

Terminal Capacitance

Ct V = 0 V, f = 1.0 MHz

100

pF

Transistor Collector to Emitter Dark

Current

ICEO VCE = 40 V, IF = 0 mA

400

nA

Coupled

Current Transfer Ratio

CTR Ratio*1

CTR

CTR1/

CTR2

IF = ±1 mA, VCE = 2 V

IF = 1 mA, VCE = 2 V

200 2 000

%

0.3

1.0

3.0

Collector Saturation

Voltage

Isolation Resistance

VCE (sat) IF = ±1 mA, IC = 2 mA

RI-O VI-O = 1.0 kV

1.0

V

1011

Ω

Isolation Capacitance

Rise Time *2

Fall Time *2

CI-O V = 0 V, f = 1.0 MHz

tr

VCC = 10 V, IC = 2 mA, RL = 100 Ω

tf

0.5

pF

100

µs

100

*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2

*2 Test circuit for switching time

IF1

IC1

VCE

IF2

IC2

IF

Pulse Input

PW = 1 ms

Duty Cycle = 1/10

50 Ω

VCC

VOUT

RL = 100 Ω

4

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