MPSH24(1997) 데이터 시트보기 (PDF) - Fairchild Semiconductor

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MPSH24
(Rev.:1997)

NPN RF Transistor

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

NPN RF Transistor

(continued)

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Sustaining Voltage*

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IC = 1.0 mA, IB = 0

IC = 100 µA, IE = 0

IE = 10 µA, IC = 0

VCB = 15 V, IE = 0

30

V

40

V

4.0

V

50

nA

ON CHARACTERISTICS

hFE

DC Current Gain

IC = 8.0 mA, VCE = 10 V

30

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

IC = 8.0 mA, VCE = 10 V,

400

f = 100 MHz

MHz

Ccb

Collector-Base Capacitance

VCB = 10 V, IE = 0, f = 1.0 MHz

0.36

pF

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

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