Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
NPN RF Transistor
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Sustaining Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 15 V, IE = 0
30
V
40
V
4.0
V
50
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 8.0 mA, VCE = 10 V
30
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 8.0 mA, VCE = 10 V,
400
f = 100 MHz
MHz
Ccb
Collector-Base Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.36
pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%