MPSH24 데이터 시트보기 (PDF) - Fairchild Semiconductor
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MPSH24 Datasheet PDF : 4 Pages
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MPSH24/MMBTH24
NPN General Purpose Amplifier
• This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100mA to 20mA range to 300MHz, and low
frequency drift common-base VHF oscillator
applications with high output levels for driving FET
mixers.
• Sourced from process 47.
• See MPSH11 for characteristics.
3
1
TO-92
1. Base 2. Emitter 3. Collector
2
1
SOT-23
Mark: 3A
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Value
30
40
4.0
50
-55 ~ +150
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)CEO
Collector-Emitter Sustaining Voltage *
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
On Characteristics
IC = 1.0mA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 15V, IE = 0
30
V
40
4.0
VV
50 nA
hFE
DC Current Gain
Small Signal Characteristics
IC = 8.0mA, VCE = 10V
30
fT
Current Gain Bandwidth Product
IC = 8.0mA, VCE = 10V,
400
f = 100MHz
MHz
Ccb
Collector-Base Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
VCB = 10V, IE = 0, f = 1.0MHz
0.36 pF
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06"
Max.
MPSH24
*MMBTH24
625
225
5.0
1.8
83.3
200
556
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. C, November 2002
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