IRF7807D2 데이터 시트보기 (PDF) - International Rectifier
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IRF7807D2 Datasheet PDF : 8 Pages
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PD- 93762
IRF7807D2
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
Description
The FETKY™ family of Co-Pack HEXFET® MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power
MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier’s
low forward drop Schottky rectifiers results in an extremely
efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics.The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V)
Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrent
70°C
Junction & Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
IF (AV)
TJ, TSTG
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
RθJA
www.irf.com
SO-8
A/S
1
8
K/D
A/S
2
7
K/D
A/S
3
6
K/D
G
4
5
K/D
D
Top View
Device Features (Max Values)
VDS
RDS(on)
Qg
QSW
Qoss
IRF7807D2
30V
25mΩ
14nC
5.2nC
21.6nC
Max.
30
±12
8.3
6.6
66
2.5
1.6
3.7
2.3
–55 to 150
Max.
50
Units
V
A
W
A
°C
Units
°C/W
1
11/8/99
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