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IRF230 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRF230
N-Channel Power MOSFETs, 12 A, 150-200 V
New Jersey Semiconductor
IRF230 Datasheet PDF : 3 Pages
1
2
3
IRF230-233/IRF630-633
MTP12N18/12N20
Electrical Characteristics
(Cont.) (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Mln
Max
Unit
On Characteristics
VQSIUI)
Gate Threshold Voltage
IRF230/233/630/633
V
2.0
4.0
MTP12N18/12N20
2.0
R
DS(on)
Static Drain-Source On-Resistance
2
4.5
n
IRF230/231/630/631
0.40
IRF232/233/632/633
0.50
MTP12N18/12N20
0.35
Vos(on)
Drain-Source On-Voltage
2
MTP12N18/12N20
2.1
V
5.0
V
4.2
V
Sfs
Forward Transconductance
3.0
Dynamic Characteristics
Q
ss
Input Capacitance
C
05S
Output Capacitance
c
t8S
Reverse Transfer Capacitance
Switching Characteristics
(T
c
= 25°C, Figures 1, 2)
1
t«on)
tr
Turn-On Delay Time
Rise Time
tdfrff)
t|
Turn-Off Delay Time
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
td(ofl)
Turn-Off Delay Time
t(
Fall Time
QB
Total Gate Charge
S (U)
800
PF
450
PF
150
PF
30
ns
50
ns
50
ns
40
ns
50
ns
250
ns
100
ns
120
ns
30
nC
Test Conditions
|p - 250
jjA,
VDS = V
es
ID - 1 mA, V
DS
= V
GS
V
QS
= 10 V, I
D
-5.0
A
ID
-6.0
A
VGS -10 V; I
D
= 6.0 A
VQS -10 V; I
D
-12.0 A;
VGS -10 V; b = 6.0 A
T
C
= 100°C
V
DS
-10 V, ID = 5.0 A
V
DS
= 25 V, V
QS
= 0 V
f-1.0 MHz
VDD - 90 V, 1
D
- 5.0 A
V
GS
= 10 V, RGEN"=15
SI
R
G
s = i5 n
V
DD
= 25 V, b = 6,0 A
VGS -10 v, RGEN-SO
fl
RGS - 50 n
V
QS
-10 V, I
D
=12 A
VDD
-120
V
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