UMB4N 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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UMB4N

dual digital transistors (PNP+PNP)

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Transistors

UMB4N dual digital transistors (PNP+PNP)

FEATURES

Two DTA144T chips in a package.

Marking: B4

Equivalent circuit

(3) (2) (1)

R1

R1

(4) (5) (6)

Absolute maximum ratings (Ta=25℃)

Symbol

VCBO

VCEO

VEBO

IC

PD

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Junction Temperature

Storage Temperature

Value

-50

-50

-5

-100

150

150

-55~+150

Units

V

V

V

mA

mW

℃

℃

SOT-363

11

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current transfer ration

Collector-emitter saturation voltage

Transition frequency

Input resistance

Symbol

Test conditions

V(BR)CBO IC=50μA, IE=0

V(BR)CEO IC=-1mA, IB=0

V(BR)EBO IE=-50μA, IC=0

ICBO

VCB=-50V, IE=0

IEBO

VEB=-4V, IC=0

hFE

VCE =-5V, IC=-1mA

VCE(sat)

fT

R1

IC=-10mA, IB=-1mA

VCE =-10V, IC=-5mA,

f =100MHz

-

Min Typ Max Unit

-50

V

-50

V

-5

V

-500 nA

-500 nA

100

600

-0.3

V

250

MHz

7

13

KΩ

A,Dec,2010

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