MMBT3904 데이터 시트보기 (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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MMBT3904 Datasheet PDF : 4 Pages
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MMBT3904
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● Complementary to MMBT3906
SOT- 23
Marking:
● 1AM
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
40
6
200
200
625
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
Test conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCE=30V, VEB(off)=3V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
CLASSIFICATION OF hFE
HFE
RANK
RANGE
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
VCB= 60V, IE=0
VEB=5V, IC=0
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=20V,IC=10mA, f=100MHz
VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1=1mA
VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1=1mA
VCC=3V, IC=10mA, IB1= IB2=1mA
VCC=3V, IC=10mA, IB1= IB2=1mA
L
100–200
100-300
C
B
E
Min
Typ
Max
60
40
6
50
100
100
100
300
60
30
0.3
0.95
300
35
35
200
50
H
200–300
High Diode Semiconductor
Unit
V
V
V
nA
nA
nA
V
V
MHz
ns
ns
ns
ns
1
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