MMBT3904 데이터 시트보기 (PDF) - MAKO SEMICONDUCTOR CO.,LIMITED
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MMBT3904 Datasheet PDF : 2 Pages
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MAKO SEMICONDUCTOR CO.,LIMITED
Plastic-Encapsulate Transistors
MMBT3904 TRANSISTOR (NPN)
FEATURES
z Complementary to MMBT3906
SOT–23
MARKING:1AM/ 1A / *04
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
M VCEO
AK VEBO
O IC
PC
S RΘJA
EM Tj
I Tstg
CO TOPR
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Operating Temperature
60
40
6
200
200
625
150
-55～+150
0～+70
V
V
V
mA
mW
℃/W
℃
℃
℃
N ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
D Parameter
UC Collector-base breakdown voltage
T Collector-emitter breakdown voltage
OR Emitter-base breakdown voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Test conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
60
40
6
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
ICEX
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
td
VCE=30V, VEB(off)=3V
C VCB= 60V, IE=0
O VEB=5V, IC=0
. VCE=1V, IC=10mA
100
,L VCE=1V, IC=50mA
60
I VCE=1V, IC=100mA
30
M IC=50mA, IB=5mA
I IC=50mA, IB=5mA
TE VCE=20V,IC=10mA, f=100MHz
300
D VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1=1mA
Rise time
VCC=3V, VBE(off)=-0.5V IC=10mA,
tr
IB1=1mA
Storage time
ts
VCC=3V, IC=10mA, IB1= IB2=1mA
Fall time
tf
VCC=3V, IC=10mA, IB1= IB2=1mA
CLASSIFICATION OF hFE(1)
HFE
100-300
RANK
RANGE
L
100–200
H
200–300
Max Unit
V
V
V
50
nA
100
nA
100
nA
300
0.3
V
0.95
V
MHz
35
ns
35
ns
200
ns
50
ns
http://www.makosemi.hk/
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