BFG540 데이터 시트보기 (PDF) - Philips Electronics
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BFG540 Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X;
BFG540/XR
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCES
IC
Ptot
hFE
Cre
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
GUM
maximum unilateral power gain
s21 2
F
insertion power gain
noise figure
CONDITIONS
open emitter
RBE = 0
Ts ≤ 60 °C; note 1
IC = 40 mA; VCE = 8 V; Tj = 25 °C
IC = 0; VCE = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
MIN.
−
−
−
−
100
−
−
−
−
15
−
−
−
TYP.
−
−
−
−
120
0.5
9
18
11
16
1.3
1.9
2.1
MAX. UNIT
20
V
15
V
120 mA
400 mW
250
−
pF
−
GHz
−
dB
−
dB
−
dB
1.8 dB
2.4 dB
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
VCBO
VCES
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
RBE = 0
open collector
Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
20
V
15
V
2.5 V
120 mA
400 mW
+150 °C
150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
290
UNIT
K/W
2000 May 23
3
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