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BFG540 데이터 시트보기 (PDF) - Philips Electronics

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BFG540
Philips
Philips Electronics Philips
BFG540 Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X;
BFG540/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Ce
emitter capacitance
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note 1)
s21 2
F
insertion power gain
noise figure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
VO
output voltage
d2
second order intermodulation
distortion
CONDITIONS
IE = 0; VCB = 8 V
IC = 40 mA; VCE = 8 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
IC = 40 mA; VCE = 8 V; RL = 50 ;
f = 900 MHz; Tamb = 25 °C
note 2
note 3
note 4
MIN.
60
15
TYP.
120
2
0.9
0.5
9
18
11
16
1.3
1.9
2.1
21
34
500
50
MAX. UNIT
50
nA
250
pF
pF
pF
GHz
dB
dB
dB
1.8 dB
2.4 dB
dB
dBm
dBm
mV
dB
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and GUM = 10 log (---1-----------s---1---1---s-2---2)--1(---1-2----------s---2--2-----2---) dB.
2. VCE = 8 V; IC = 40 mA; RL = 50 ; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p q) = 898 MHz and f(2q p) = 904 MHz.
3. dim = 60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 ; Tamb = 25 °C;
Vp = VO; Vq = VO 6 dB; Vr = VO 6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p + q r) = 793.25 MHz.
4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
2000 May 23
4

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