BF1201R 데이터 시트보기 (PDF) - Philips Electronics
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BF1201R Datasheet PDF : 16 Pages
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Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VDS
drain-source voltage
ID
drain current (DC)
IG1
gate 1 current
IG2
gate 2 current
Ptot
total power dissipation
BF1201; BF1201R
BF1201WR
Tstg
storage temperature
Tj
operating junction temperature
CONDITIONS
Ts ≤ 113 °C; note 1
Ts ≤ 109 °C; note 1
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
BF1201; BF1201R
BF1201WR
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0
50
MCD934
(2) (1)
100
150
200
Ts (°C)
(1) BF1201WR.
(2) BF1201 and BF1201R.
Fig.4 Power derating curve.
2000 Mar 29
3
Product specification
BF1201; BF1201R;
BF1201WR
MIN.
−
−
−
−
MAX.
10
30
±10
±10
UNIT
V
mA
mA
mA
−
200
mW
−
200
mW
−65
+150
°C
−
150
°C
VALUE
185
155
UNIT
K/W
K/W
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